K4J52324QE - 512Mbit GDDR3 SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4J52324QE
Manufacturer	Samsung
File Size	1.40 MB
Description	512Mbit GDDR3 SDRAM
Datasheet	K4J52324QE Datasheet
Additional preview pages of the K4J52324QE datasheet.

Product details

Description

FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.9V + 0.1V power supply for device operation for -BJ.
1.9V + 0.1V power supply for I/O interface for -BJ.
1.8V + 0.1V power supply for device operation for -BC.
1.8V + 0.1V power supply for I/O interface for -BC.
On-Die Termination (ODT).
Output Driver Strength adjustment by EMRS.
Calibrated output drive.
1.8V Pseudo Open drain compatible inputs/outputs.
8 internal banks for.

📁 Similar Datasheet

Other Datasheets by Samsung

K4J55323QF-GC - 256Mbit GDDR3 SDRAM
K4J55323QF-GC14 - 256Mbit GDDR3 SDRAM
K4J55323QF-GC15 - 256Mbit GDDR3 SDRAM
K4J55323QF-GC16 - 256Mbit GDDR3 SDRAM
K4J55323QF-GC20 - 256Mbit GDDR3 SDRAM

Published: Mar 11, 2014 |