K4J55323QF-GC - 256Mbit GDDR3 SDRAM
(Samsung)
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe.
K4J55323QF-GC14 - 256Mbit GDDR3 SDRAM
(Samsung)
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe.
K4J55323QF-GC15 - 256Mbit GDDR3 SDRAM
(Samsung)
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe.
K4J55323QF-GC16 - 256Mbit GDDR3 SDRAM
(Samsung)
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe.
K4J52324QE - 512Mbit GDDR3 SDRAM
(Samsung)
K4J52324QE
512M GDDR3 SDRAM
512Mbit GDDR3 SDRAM
Revision 1.3 Feb 2008
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND.
K4003 - 2SK4003
(Toshiba Semiconductor)
2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4003
Chopper Regulator, DC/DC Converter and Motor Drive Applications.
K4004-01MR - Power MOSFET
(Fuji)
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,le.
K4005-01MR - Power MOSFET
(Fuji Electric)
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,le.