K9G8G08B0B Datasheet - Samsung

K9G8G08B0B FLASH MEMORY

Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte p.

K9G8G08B0B K9G8G08U0B Final FLASH MEMORY K9G8G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional informa.

K9G8G08B0B Features

* Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)By

K9G8G08B0B Datasheet (839.83 KB)