K9G8G08U0M - (K9XXG08UXM) Flash Memory
Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed i
www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K9G8G08U0M Features
* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
* Page Read Operation - Page Size : (2K + 64)By
