K9GAG08B0D Datasheet - Samsung

K9GAG08B0D FLASH MEMORY

Offered in 2Gx8bit, the K9GAG08X0D is a 16G-bit NAND Flash Memory with spare 872M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte .

K9GAG08B0D K9GAG08U0D Advance FLASH MEMORY K9GAG08X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional infor.

K9GAG08B0D Features

* Voltage Supply - 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V - 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit

* Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 2

K9GAG08B0D-Samsung.pdf