* Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
* Command/Address/Data Multiplexed I/O Port
* Hardware Data Protection - Program/Erase Lockout During Power Transitions
* Reliable CMOS Floating-Gate Technology - Endurance : 5K Pro
K9GAG08U0M Datasheet (1.04 MB)
K9GAG08U0M
Samsung
1.04 MB
Flash memory.
www.DataSheet4U.com
K9LAG08U1M K9G8G08U0M
Preliminary FLASH MEMORY
K9XXG08UXM
www.DataSheet4U.com
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELA.
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