K9GAG08U0D, K9GAG08B0D Datasheet - Samsung

K9GAG08U0D, K9GAG08B0D, FLASH MEMORY

K9GAG08B0D K9GAG08U0D Advance FLASH MEMORY K9GAG08X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO C.
Offered in 2Gx8bit, the K9GAG08X0D is a 16G-bit NAND Flash Memory with spare 872M-bit.

Features

* Voltage Supply - 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V - 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit
* Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 2

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

K9GAG08B0D-Samsung.pdf