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K9GAG08X0D Key Features

  • Voltage Supply
  • 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V
  • 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (2G + 109M) x 8bit
  • Data Register : (4K + 218) x 8bit
  • Automatic Program and Erase
  • Page Program : (4K + 218)Byte
  • Block Erase : (512K + 27.25K)Byte
  • Page Read Operation

Related Samsung Semiconductor Datasheets

Part Number Description
K9GAG08B0D FLASH MEMORY
K9GAG08B0M FLASH MEMORY
K9GAG08U0D FLASH MEMORY
K9GAG08U0E 16Gb E-die NAND Flash
K9GAG08U0F 16Gb F-die NAND Flash

K9GAG08X0D Description

Offered in 2Gx8bit, the K9GAG08X0D is a 16G-bit NAND Flash Memory with spare 872M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

K9GAG08X0D Applications

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