Samsung K9GAG08U0D
the K9GAG08X0D is a 16G-bit NAND Flash Memory with spare 872M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.| Part No. | K9GAG08U0D |
|---|---|
| Datasheet | K9GAG08U0D Download |
| Manufacturer |  Samsung |
| Description | FLASH MEMORY |
| Buy | Stock & Price |
FEATURES
● Voltage Supply - 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V - 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V● Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit
● Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte
● Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.)
● Memory Cell : 2bit / Memory Cell
● Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
● Command/Address/Data Multiplexed I/O Port
● Hardware Data Protection - Program/Erase Lockout During Power Transitions
● Reliable CMOS Floating-Gate Technology - Endurance : TBD Cycles(with TBD ECC) - Data Retention : TBD Years
● Command Register Operation
● Unique ID for Copyright Protection
● Package : - K9GAG08U0D-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 2Gx8bit, The device is offered in 2.7V and 3.3V Vcc. A p...
