K9GAG08U0M Overview
K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM .. INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
K9GAG08U0M Key Features
- Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Mult
K9GAG08U0M Applications
- Samsung Electronics reserves the right to change products or specification without notice