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K9GAG08U0M - Flash Memory

General Description

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Key Features

  • Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
  • Command/Address/Data Multiplexed I/O Port.
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions.
  • Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years.
  • Command Register Operation.
  • Unique ID for Copyright Protection.
  • Package : - K9G8G08U0M-PCB0/PIB0 : Pb-F.

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📁 Similar Datasheet

Part Number Description Manufacturer
K9G8G08U0M (K9XXG08UXM) Flash Memory Samsung Electronics

Other Datasheets by Samsung Semiconductor

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K9GAG08U0M FLASH MEMORY
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K9GAG08U0E 16Gb E-die NAND Flash
K9GAG08U0F 16Gb F-die NAND Flash
K9GAG08B0D FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.