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K9GAG08U0M Datasheet Flash Memory

Manufacturer: Samsung Semiconductor

Overview: .. K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM .. INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
  • Command/Address/Data Multiplexed I/O Port.
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions.
  • Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years.
  • Command Register Operation.
  • Unique ID for Copyright Protection.
  • Package : - K9G8G08U0M-PCB0/PIB0 : Pb-F.

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