K9GAG08U0F Datasheet - Samsung

K9GAG08U0F 16Gb F-die NAND Flash

of Random Read(tR) is changed from typical max. to max. 2. Address of spare blocks arrangement is amended. 3. Comment for Randomizer requirement is amended. 4. Description for unaligned Multi-plane operation is added. 5. Register read out mode 2 deleted. 6. Corrected errata. 1.5.18 2nd Read ID is am.

Rev.1.1, May. 2011 K9GAG08U0F 16Gb F-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license .

K9GAG08U0F Datasheet (1.03 MB)