K9K8G08U0M - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

Samsung

Datasheet Details

Part number	K9K8G08U0M
Manufacturer	Samsung
File Size	1.19 MB
Description	1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Datasheet	K9K8G08U0M_Samsungsemiconductor.pdf

Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Multiplexed I/O.

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Published: Dec 20, 2005 |