K9PFGD8S7M-B, K9GB-GD8 - FLASH MEMORY

Samsung

The K9PFGD8S7M-B by Samsung is a FLASH MEMORY. Below is the official datasheet preview.

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K9PFGD8S7M-B FLASH MEMORY by Samsung - Datasheet Preview — Official preview page of the **K9PFGD8S7M-B** FLASH MEMORY datasheet (Samsung).

Datasheet Details

Part number	K9PFGD8S7M-B, K9GB-GD8
Manufacturer	Samsung
File Size	1.10 MB
Description	FLASH MEMORY
Datasheet	K9GB-GD8-U0M.pdf
Note	This datasheet PDF includes multiple part numbers: K9PFGD8S7M-B, K9GB-GD8. Please refer to the document for exact specifications by model.
Additional preview pages of the K9PFGD8S7M-B datasheet.

K9PFGD8S7M-B Product details

Description

Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit.The device is offered in 3.3V Vcc & VccQ.(3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate.Its NAND cell provides the most cost-effective solution for the solid state application market.A program operation can be performed in typical 2ms on the (8K+512)Byte page and an erase operation can be performed in typical 1.5ms on a (1M+64K

Features

Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
Fast Write Cycle Time - Page Program time.

📁 K9PFGD8S7M-B Similar Datasheet

K9PDG08U5D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)

Other Datasheets by Samsung

K9PFGD8S5M-B - FLASH MEMORY
K9PFGD8U5M-B - FLASH MEMORY
K9PFGD8U7M-B - FLASH MEMORY
K9PFGD8X5M - FLASH MEMORY
K9PFGD8X7M - FLASH MEMORY

Published: Sep 30, 2015 |