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K9PFGD8X7M

FLASH MEMORY

K9PFGD8X7M Features

* Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V

* Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit

* Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte

* Page

K9PFGD8X7M General Description

Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit. The device is offered in 3.3V Vcc & VccQ. (3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate. Its NAND cell provides the most cost-effec.

K9PFGD8X7M Datasheet (1.10 MB)

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Datasheet Details

Part number:

K9PFGD8X7M

Manufacturer:

Samsung

File Size:

1.10 MB

Description:

Flash memory.
K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFO.

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K9PFGD8X7M FLASH MEMORY Samsung

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