K9PFGD8X7M, K9GB-GD8 - FLASH MEMORY

Samsung

The K9PFGD8X7M by Samsung is a FLASH MEMORY. Below is the official datasheet preview.

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K9PFGD8X7M FLASH MEMORY by Samsung - Datasheet Preview — Official preview page of the **K9PFGD8X7M** FLASH MEMORY datasheet (Samsung).

Datasheet Details

Part number	K9PFGD8X7M, K9GB-GD8
Manufacturer	Samsung
File Size	1.10 MB
Description	FLASH MEMORY
Datasheet	K9GB-GD8-U0M.pdf
Note	This datasheet PDF includes multiple part numbers: K9PFGD8X7M, K9GB-GD8. Please refer to the document for exact specifications by model.
Additional preview pages of the K9PFGD8X7M datasheet.

K9PFGD8X7M Product details

Description

Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit.The device is offered in 3.3V Vcc & VccQ.(3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate.Its NAND cell provides the most cost-effective solution for the solid state application market.A program operation can be performed in typical 2ms on the (8K+512)Byte page and an erase operation can be performed in typical 1.5ms on a (1M+64K

Features

Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
Fast Write Cycle Time - Page Program time.

📁 K9PFGD8X7M Similar Datasheet

K9PDG08U5D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)

Other Datasheets by Samsung

K9PFGD8X5M - FLASH MEMORY
K9PFGD8S5M-B - FLASH MEMORY
K9PFGD8S7M-B - FLASH MEMORY
K9PFGD8U5M-B - FLASH MEMORY
K9PFGD8U7M-B - FLASH MEMORY

Published: Sep 30, 2015 |