KMM366S1623DTL Datasheet (Samsung) - PC66 Unbuffered DIMM

KMM366S1623DTL, PC66 Unbuffered DIMM

The Samsung KMM366S1623DTL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung KMM366S1623DTL consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Two 0.33u

KMM366S1623DTL Revision History Revision 0.0(July 7, 1999) PC66 Unbuffered DIMM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.

Skip ICC4 value of CL=2 in DC characteristics in datasheet.

Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

Symbol Change Notice IIL IIL IOL Before Input leakage current (inputs) Input leakage current (I

KMM366S1623DTL Features

* al CKE0 ~ CKE1 CS0 ~ CS3 DQM0 ~ DQM7 DQ0 ~ DQ63 Max lengths 5.5 4.0 3.0 2.0 Unit Inches Inches Inches Inches REV. 0.0 July 1999 KMM366S1623DTL DC CHARACTERISTICS Parameter (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Symbol Burst length = 1 tRC ≥ tRC(m