SW2N40DC
Samwin
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N-channel mosfet. This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characterist
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SW2N10 - MOSFET
(SEMIPOWER)
SAMWIN
SW2N10
N-channel SOT-23 MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max0.24Ω)@VGS=10V ■ Gate Charge (Typical 13nC) ■ Improved dv/dt Capabil.
SW2N60 - power MOSFET
(Samwin)
SAMWIN
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zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A :.
SW2N60D - MOSFET
(SEMIPOWER)
SAMWIN
SW2N60D
N-channel I-PAK/D-PAK/TO220F MOSFET
Features
TO-251
TO-252
TO-220F
■ High ruggedness
■ RDS(ON) (Max 4.5Ω)@VGS=10V ■ Gate Charge.
SW2N65 - N-channel MOSFET
(SAMWIN)
SAMWIN
SW2N65
N-channel MOSFET
BVDSS : 650V ID : 2.0A RDS(ON) : 5.0ohm
2 1 2 1 3 2 3 1
Features
■ High ruggedness ■ RDS(ON) (Max 5.0 Ω)@VGS=10V ■ Ga.
SW2N65B - N-channel MOSFET
(SAMWIN)
SAMWIN
SW2N65B
N-channel MOSFET
Features
TO-220F
■ High ruggedness ■ RDS(ON) (Max 5.6 Ω)@VGS=10V ■ Gate Charge (Typical 7.7nC) ■ Improved dv/dt C.
SW2N70 - MOSFET
(SEMIPOWER)
SAMWIN
SW2N70
Features
■ High ruggedness ■ RDS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO.
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SW20CXC950 - GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
(PST)
Technical Data : AD-031
Page 1 of 2
PST SW*CXC950- Standard Rectifier
1400 - 2000 VRRM; 2400 A avg
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