SW2N10

MOSFET

SEMIPOWER

SW2N10 Features

* High ruggedness

* RDS(ON) (Max0.24Ω)@VGS=10V

* Gate Charge (Typical 13nC)

* Improved dv/dt Capability

* 100% Avalanche Tested SOT-23 3 2 1 1. Gate 2. Source 3. Drain General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology en

SW2N10 General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW2N10 Datasheet (419.29 KB)

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Datasheet Details

Part number:

SW2N10

Manufacturer:

SEMIPOWER

File Size:

419.29 KB

Description:

Mosfet.

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SW2N10 MOSFET SEMIPOWER

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SW2N10 Features

SW2N10 General Description

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