SDS065J006E3

SiC Schottky Barrier Diode

SDS065J006E3 General Description

VRRM 650 V IF(135℃) 10 A QC 17 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065006E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 65.

SDS065J006E3 Datasheet (331.57 KB)

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Datasheet Details

Part number:

SDS065J006E3

Manufacturer:

Sanan

File Size:

331.57 KB

Description:

Sic schottky barrier diode.
Datasheet SDS065J006E3 650V/6A SiC Schottky Barrier Diode Characteristic

* Zero Reverse Recovery Current

* Positive temperature coe.

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SDS065J006E3 SiC Schottky Barrier Diode Sanan

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SDS065J006E3 General Description

Datasheet Details

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