2SK2800, Hitachi Semiconductor
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 15 mΩ typ.
2SK2802, Hitachi Semiconductor
2SK2802
Silicon N Channel MOS FET Low Frequency Power Switching
ADE-208-537C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0. 2 Ω.
2SK2804, Sanken electric
2SK2804
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±5 ± 20 35 (Tc = 25ºC) 90 5 150 –55 to +15.
2SK2805, Sanken electric
2SK2805
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 15 ± 60 80 (Tc = 25ºC) 550 15 150 –55 to.
2SK2806, Fuji Electric
2SK2806-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2806-01, Fuji Electric
2SK2806-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2807-01L, Fuji Electric
2SK2807-01L,S
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.