Sanken electric manufacturer logo and representative part image Part number: FKP252 Manufacturer: Sanken ↗ electric File Size: 338.18kb Download: 📄 Datasheet Description: Mosfet.
FKP250A - N-Channel MOSFET (Sanken electric) N-Channel MOS FET FKP250A ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed June, 2007 ■Package---FM100 (TO.
FKP250A - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : .
FKP252 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
FKP253 - N-Channel MOSFET (Sanken electric) N-Channel MOS FET FKP253 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed June, 2007 ■Package---FM20 (TO22.
FKP253 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
FKP202 - N-Channel MOSFET (Sanken electric) N-Channel MOS FET FKP202 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee March. 2007 ■Package---FM20 (TO22.
FKP202 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : .
FKP280A - N-Channel MOSFET (Sanken electric) N-Channel MOS FET FKP280A September, 2005 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Package---FM.
FKP280A - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=280V(Min) ·Static Drain-Source On-Resistance : .
FKP0014 - N-Channel MOSFET (FETek) FETek Technology Corp. Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technolo.