Part number:
SKI10297
Manufacturer:
File Size:
588.54 KB
Description:
N-channel trench power mosfet.
SKI10297 Datasheet (588.54 KB)
* V(BR)DSS
* 100 V (ID = 100 µA)
* ID
SKI10297 Datasheet (588.54 KB)
SKI10297
588.54 KB
N-channel trench power mosfet.
📁 Related Datasheet
SKI10297 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI10297
FEATURES ·Drain Current –ID= 34A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-R.
SKI10123 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI10123
FEATURES ·Drain Current –ID= 66A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-R.
SKI10123 - N-channel Trench Power MOSFET
(Sanken)
100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI10123
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ------.
SKI10195 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI10195
FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-R.
SKI10195 - N-channel Trench Power MOSFET
(Sanken)
100 V, 47 A, 13.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI10195
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID -----.
SKI-FF530 - Infrared emitting diode which mounted high power 850 nm IR CHIP
(ETC)
..
..
1.0
Ta = 25 Relative luminous intensity ( % )
0.8
0.6
0.4
0.2
0.0 730 770 810 850 890 930 970
Waveleng.
SKI03021 - N-channel Trench Power MOSFET
(Sanken)
30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03021
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03021 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
SKI03021
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
