2SA1682 - PNP Epitaxial Planar Silicon Transistor
2SA1682 Features
* High breakdown voltage (VCEO≥300V).
* Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
* Excellent DC current gain ratio (hFE ratio : 1.0 typ).
* Adoption of FBET process. Specifications Absolute Maximum Ratings at
