* High breakdown voltage (VCEO≥300V).
* Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
* Excellent DC current gain ratio (hFE ratio : 1.0 typ).
* Adoption of FBET process. Specifications Absolute Maximum Ratings at
2SA1682
Sanyo Semicon Device
40.37 KB
Pnp epitaxial planar silicon transistor.
Ordering number : EN3011B 2SA1682 SANYO Semiconductors DATA SHEET 2SA1682 PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Volta.
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