2SA1683 - PNP Epitaxial Planar Silicon Transistors
2SA1683 Features
* Adoption of FBET process.
* High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Vo
