* Adoption of MBIT process.
* High breakdown voltage, large current capacity.
* Fast switching speed. Package Dimensions unit:mm 2064 [2SA1768/2SC4612] ( ) : 2SA1768 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage
2SA1768
Sanyo Semicon Device
152.22 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3582
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1768/2SC4612
High-Voltage Switching Applications
Applicaitons
* Color TV .
📁 Related Datasheet
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2SA1762
Silicon PNP epitaxial planer type
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6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±.
2SA1763 - PNP Epitaxial Planar Silicon Transistors
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2SA1766 - PNP Epitaxial Planar Silicon Transistors
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2SA1767 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1473A
5.0±0.2
Unit: mm
4.0±0.2
q
High collector.
2SA1767 - Silicon NPN triple diffusion planer type Transistor
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2SA1767
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1473A
5.0±0.2
Unit: mm
4.0±0.2
q
High collector.
