2SA1700 Datasheet PDF - INCHANGE PNP Transistor Specs

2SA1700 - PNP Transistor

Datasheet Summary

Description

High breakdown voltage Low Collector-Emitter Saturation Voltage High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

For high voltage driver applications.

Datasheet Details

Part number	2SA1700
Manufacturer	INCHANGE
File Size	232.16 KB
Description	PNP Transistor
Datasheet	2SA1700 Datasheet
Additional preview pages of the 2SA1700 datasheet.

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Full PDF Text Transcription

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isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.4 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1700 isc website：www.iscsemi.

Published: Sep 27, 2020 |