* Adoption of FBET process.
* Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector C
2SA1705
Sanyo Semicon Device
122.48 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Vo.
📁 Related Datasheet
2SA1700 PNP Transistor (INCHANGE)
2SA1700 PNP Epitaxial Silicon Transistor (Sanyo Semicon Device)
2SA1700 Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SA1700 PNP Transistor (LGE)
2SA1700 PNP Epitaxial Planar Silicon Transistor (GME)
2SA1700 PNP EPITAXIAL SILICON TRANSISTOR (UTC)
2SA1701 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1702 PNP Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1703 PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1703 Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
