2SA1715
Micro Electronics
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(2saxxxx) transistor.
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2SA1710 - PNP/NPN Epitaxial Planar Silicon Transistors
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Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process.
PNP/NPN .
2SA1714 - PNP SILICON EPITAXIAL POWER TRANSISTOR
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DATA SHEET
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2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
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2SA1718 - SILICON POWER TRANSISTOR
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Product Specification
Silicon PNP Power Transistors
2SA1718
DESCRIPTION ·With TO-220F package ·High DC .
2SA1718 - POWER TRANSISTOR
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isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Minimum Lot-to-.
2SA1700 - PNP Transistor
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isc Silicon PNP Power Transistor
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2SA1700 - PNP Epitaxial Silicon Transistor
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2SA1700 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1700
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
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2SA1700 - PNP Transistor
(LGE)
1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellen.
2SA1700 - PNP Epitaxial Planar Silicon Transistor
(GME)
PNP Epitaxial Planar Silicon Transistor
FEATURES
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
Lead-free
Prod.
2SA1700 - PNP EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
* High breakdown voltage. * Exc.
