2SA1718
SavantIC
235.12kb
Silicon power transistor. With TO-220F package High DC current gain. Low collector saturation voltage. DARLINGTON APPLICATI
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· High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process.
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2SA1714 - PNP SILICON EPITAXIAL POWER TRANSISTOR
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DATA SHEET
SILICON TRANSISTOR
2SA1714
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The 2SA1714 is a high.
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DataSheet 4 U .
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2SA1718 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Minimum Lot-to-.
2SA1700 - PNP Transistor
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isc Silicon PNP Power Transistor
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2SA1700 - PNP Epitaxial Silicon Transistor
(Sanyo Semicon Device)
.
2SA1700 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1700
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
/ Features ,, MBIT 。 High br.
2SA1700 - PNP Transistor
(LGE)
1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellen.
2SA1700 - PNP Epitaxial Planar Silicon Transistor
(GME)
PNP Epitaxial Planar Silicon Transistor
FEATURES
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
Lead-free
Prod.
2SA1700 - PNP EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
* High breakdown voltage. * Exc.