2SA1006A PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SA1006A .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). Wide Area of Safe Operation. Complement to T.

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Datasheet Specifications

Part number: 2SA1006A
Manufacturer: INCHANGE
File Size: 203.50 KB
Datasheet: 2SA1006A-INCHANGE.pdf
Description: PNP Transistor

Applications

* Adudio frequency power amplifier
* High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A

2SA1006A Distributors

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2SA1006A PNP Transistor INCHANGE

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