Datasheet4U Logo Datasheet4U.com

2SA1006A PNP Transistor

2SA1006A Description

isc Silicon PNP Power Transistor 2SA1006A .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). Wide Area of Safe Operation. Complement to T.

2SA1006A Applications

* Adudio frequency power amplifier
* High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A

📥 Download Datasheet

Preview of 2SA1006A PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SA1006A
Manufacturer
INCHANGE
File Size
203.50 KB
Datasheet
2SA1006A-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SA1006 - PNP/NPN TRANSISTOR (NEC)
  • 2SA1006B - PNP/NPN TRANSISTOR (NEC)
  • 2SA100 - Ge PNP Drift Transistor (ETC)
  • 2SA1001 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SA1003 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SA1007 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SA1008 - Silicon POwer Transistors (SavantIC)
  • 2SA1009 - Silicon PNP Power Transistor (Inchange Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SA1006A-like datasheet