2SA1003 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SA1003
Manufacturer: Inchange Semiconductor
File Size: 194.92 KB
Datasheet: 2SA1003-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissip

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2SA1003 Silicon PNP Power Transistor Inchange Semiconductor

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