2SA1001 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1001 .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SA1001
Manufacturer: Inchange Semiconductor
File Size: 195.44 KB
Datasheet: 2SA1001-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissip

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