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2SA1001 - Silicon PNP Power Transistor

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Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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Datasheet Details

Part number 2SA1001
Manufacturer Inchange Semiconductor
File Size 195.44 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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