2SA1001 Datasheet - Inchange Semiconductor

2SA1001, Silicon PNP Power Transistor

isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION *High Current Capability *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.)

Applications

* Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissip

2SA1001-InchangeSemiconductor.pdf