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2SA1011 POWER TRANSISTOR

2SA1011 Description

sc Silicon PNP Power Transistor 2SA1011 .
Low Collector Saturation Voltage- : VCE(sat)= -0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min. Compl.

2SA1011 Applications

* Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Col

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