2SA1011 Datasheet - Inchange Semiconductor

2SA1011, POWER TRANSISTOR

sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION *Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A *Collector-Emitter

Applications

* Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Col

2SA1011_InchangeSemiconductor.pdf