2SA1011 POWER TRANSISTOR

Inchange Semiconductor

Description

sc Silicon PNP Power Transistor 2SA1011 .
Low Collector Saturation Voltage- : VCE(sat)= -0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min. Compl.

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Datasheet Specifications

Part number: 2SA1011
Manufacturer: Inchange Semiconductor
File Size: 203.48 KB
Datasheet: 2SA1011_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Col

2SA1011 Distributors

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2SA1011 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1011-like datasheet