Datasheet4U Logo Datasheet4U.com

2SA1007

Silicon PNP Power Transistor

2SA1007 General Description


*High Current Capability
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)
*Complement to Type 2SC2337
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for audio and general purpose applications. ABSOLUTE MAX.

2SA1007 Datasheet (195.56 KB)

Preview of 2SA1007 PDF

Datasheet Details

Part number:

2SA1007

Manufacturer:

Inchange Semiconductor

File Size:

195.56 KB

Description:

Silicon pnp power transistor.

📁 Related Datasheet

2SA100 - Ge PNP Drift Transistor (ETC)
.. .. .

2SA1001 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum.

2SA1002 - Silicon PNP Power Transistor (INCHANGE)
isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Minimum Lot-to-L.

2SA1003 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-L.

2SA1006 - PNP/NPN TRANSISTOR (NEC)
This Material Copyrighted By Its Respective Manufacturer .

2SA1006 - Silicon POwer Transistors (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B · DESCRIPTION ·With TO-2.

2SA1006A - PNP/NPN TRANSISTOR (NEC)
This Material Copyrighted By Its Respective Manufacturer .

2SA1006A - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Wide.

TAGS

2SA1007 Silicon PNP Power Transistor Inchange Semiconductor

Image Gallery

2SA1007 Datasheet Preview Page 2

2SA1007 Distributor