2SA1007 Datasheet, Transistor, Inchange Semiconductor

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2SA1007

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon pnp power transistor.

High Current Capability

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)

Complement to Type 2S

2SA1007 Application

• Applications
• Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO

TAGS

2SA1007

Inchange Semiconductor

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