2SA1006B PNP Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min). Wide Area of Safe Operation. Complement to.

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Datasheet Specifications

Part number: 2SA1006B
Manufacturer: INCHANGE
File Size: 322.75 KB
Datasheet: 2SA1006B-INCHANGE.pdf
Description: PNP Transistor

Applications

* Adudio frequency power amplifier
* High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IC

2SA1006B Distributors

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2SA1006B PNP Transistor INCHANGE

INCHANGE 2SA1006B-like datasheet