2SA1006B Datasheet - INCHANGE

2SA1006B, PNP Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min). Wide Area of Safe Operation. Complement to.

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Datasheet Details

Part number:

2SA1006B

Manufacturer:

INCHANGE

File Size:

322.75 KB

Description:

PNP Transistor

Applications

* Adudio frequency power amplifier
* High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IC

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2SA1006B PNP Transistor INCHANGE

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