Part number:
2SA1708
Manufacturer:
Sanyo Semicon Device
File Size:
66.20 KB
Description:
Pnp/npn epitaxial planar silicon transistors.
* Adoption of FBET, MBIT processes.
* High breakdown voltage, large current capacity.
* Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.54 Specifications Absolute Maximum Ratings at
2SA1708
Sanyo Semicon Device
66.20 KB
Pnp/npn epitaxial planar silicon transistors.
📁 Related Datasheet
2SA1700 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation-
: PC= 10W@TC=.
2SA1700 - PNP Epitaxial Silicon Transistor
(Sanyo Semicon Device)
.
2SA1700 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1700
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
/ Features ，， MBIT 。 High br.
2SA1700 - PNP Transistor
(LGE)
1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellen.
2SA1700 - PNP Epitaxial Planar Silicon Transistor
(GME)
PNP Epitaxial Planar Silicon Transistor
FEATURES
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
Lead-free
Prod.
2SA1700 - PNP EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
* High breakdown voltage. * Exc.
2SA1701 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3022
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1701/2SC4481
Low-Frequency General-Purpose Amplifier Applications
Application.
2SA1702 - PNP Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
.
