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2SA1773 PNP Transistor

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Description

isc Silicon PNP Power Transistor .
High breakdown voltage: V(BR)CEO >-400V @IC=-1mA. Large current capacity. Minimum Lot-to-Lot variations for robust device performance and.

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Datasheet Specifications

Part number
2SA1773
Manufacturer
INCHANGE
File Size
208.66 KB
Datasheet
2SA1773-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ T

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