Datasheet Details
| Part number | 2SA1002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.57 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1002-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.57 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1002-INCHANGE.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1002 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
Compare 2SA1002 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
| 2SA1012-D | PNP Transistor |
| 2SA1013 | PNP Transistor |
| 2SA1046 | PNP Transistor |
| 2SA1061 | PNP Transistor |
| 2SA1116 | PNP Transistor |