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2SA1002 - Silicon PNP Power Transistor

General Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1002 isc website：www.iscsemi.