Datasheet Details
| Part number | 2SA1006B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 322.75 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1006B-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B.
| Part number | 2SA1006B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 322.75 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1006B-INCHANGE.pdf |
|
|
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·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Total Power Dissipation@ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
IB= -50mA -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -500mA;
Compare 2SA1006B distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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