Datasheet Summary
INCHANGE Semiconductor isc Silicon PNP Power Transistor
DESCRIPTION
- Good Linearity of hFE
- High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -250Vdc (Min)
- Wide Area of Safe Operation
- plement to Type 2SC2336B
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Adudio frequency power amplifier
- High frequency power...
