Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min) Wide Area of Safe Operation Complement to Type 2SC2336B Minimum Lot-to-Lot variations for robust device performance and reliable operation.
2SA1009 — Inchange Semiconductor — Silicon PNP Power Transistor
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy