| Part number | 2SA1007 |
|---|---|
| Datasheet | 2SA1007-InchangeSemiconductor.pdf |
| File Size | 195.56 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·plement to Type 2SC2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC...
See all Inchange Semiconductor datasheets
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|---|---|
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |
| 2SA1015 | Silicon PNP Power Transistors |
| 2SA1021 | POWER TRANSISTOR |
| 2SA1028 | Silicon PNP Power Transistor |
| 2SA1040 | Silicon PNP Power Transistors |
| 2SA1041 | POWER TRANSISTOR |
