Datasheet Details
| Part number | 2SA1007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.56 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1007-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1007.
| Part number | 2SA1007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.56 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1007-InchangeSemiconductor.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SC2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
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