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2SA1008 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A Fast Switching Speed Complement to Type 2SC2331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regul

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Fast Switching Speed ·Complement to Type 2SC2331 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A Collector Power Dissipation@ Ta=25℃ 1.