Datasheet Details
| Part number | 2SA1006A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1006A-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1006A.
| Part number | 2SA1006A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1006A-INCHANGE.pdf |
|
|
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·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Total Power Dissipation@ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA;
IB= -50mA ICBO Collector Cutoff Current VCB= -150V;
Compare 2SA1006A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1006A | PNP/NPN TRANSISTOR | NEC |
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2SA1006 | PNP/NPN TRANSISTOR | NEC |
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2SA1006 | Silicon POwer Transistors | SavantIC |
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