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2SA1772 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • High breadown voltage Large current capacity (IC=1A) +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 max + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Tc=25 Junction Tmeperature Storage Temperature Sym.

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SA1772 Features High breadown voltage Large current capacity (IC=1A) +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 max + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Tc=25 Junction Tmeperature Storage Temperature Symbol VCBO VCEO VEBO IC IC Pc Tj Tstg Rating -400 -400 -5 -1 -2 1 15 150 -55 to 150 Unit V V V A A W W + 0.252 .6 5 -0.1 +5.55 0.15 -0.15 Unit: mm 1 Base 2 Collector 3 Emitter 3.80 www.kexin.com.