2SA1771 Datasheet | SavantIC

DESCRIPTION - With TO-220F package - Low collector saturation voltage - High speed switching time APPLICATIONS - High current switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS MAX -80 -80 -14 -12 -1.2 30 150 -55~150 UNIT V V V A A W Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50m A ;IB=0 IC=-6A ;IB=-0.3A IC=-6A; IB=-0.3A VCB=-80V; IE=0 VEB=-14V; IC=0 IC=-1A ; VCE=-1V IC=-6A ; VCE=-1V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 100 40 MIN -80 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 f T COB TYP. UNIT V -0.4 -1.2 -10 -10 320 V V µA µA 50 300 MHz p F ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A; VCC=-30V RL=5? Duty cycle@1% 0.2 0.6 0.1 µs µs µs Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10...