Datasheet Details
| Part number | 2SA1771 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1771_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1771 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1771_InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -14 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.2 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1771 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1771 | TRANSISTOR | Toshiba Semiconductor |
 |
2SA1771 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1770 | Silicon PNP Power Transistor |
| 2SA1718 | POWER TRANSISTOR |
| 2SA1725 | POWER TRANSISTOR |
| 2SA1726 | POWER TRANSISTOR |
| 2SA1741 | POWER TRANSISTOR |
| 2SA1742 | Silicon PNP Power Transistors |
| 2SA1744 | Silicon PNP Power Transistor |
| 2SA1746 | POWER TRANSISTOR |
| 2SA1757 | POWER TRANSISTOR |
| 2SA1758 | POWER TRANSISTOR |