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2SA1771 - POWER TRANSISTOR

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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Datasheet Details

Part number 2SA1771
Manufacturer Inchange Semiconductor
File Size 208.41 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -14 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.2 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1771 isc website： www.iscsemi.
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