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2SA1773 - PNP Transistor

General Description

High breakdown voltage: V(BR)CEO >-400V @IC=-1mA Large current capacity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage: V(BR)CEO >-400V @IC=-1mA ·Large current capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1773 isc website：www.iscsemi.