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2SA1009A - PNP Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0.3A ·Fast Switching Speed ·Wide Reverse Bias Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, DC/DC converters and High frequency power amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A PC Collector Power Dissipation@ Ta=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1009A isc website：www.iscsemi.