Datasheet Details
| Part number | 2SA1009A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.86 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1009A-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1009A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.86 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1009A-INCHANGE.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0.3A ·Fast Switching Speed ·Wide Reverse Bias Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, DC/DC converters and High frequency power amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A PC Collector Power Dissipation@ Ta=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1009A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IC= -0.3A;
IB= -0.06A, L=1mH IC= -0.3A;
Compare 2SA1009A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1009A | PNP SIlicon Power Transistor | NEC |
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2SA1009 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SA1009 | PNP SIlicon Power Transistor | NEC |
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