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2SA1700 - PNP Transistor

General Description

High breakdown voltage Low Collector-Emitter Saturation Voltage High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

For high voltage driver applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.4 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1700 isc website：www.iscsemi.