Datasheet Details
| Part number | 2SA1700 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.16 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1700-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1700 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.16 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1700-INCHANGE.pdf |
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·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.4 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1700 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA;
IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1700 | PNP Epitaxial Silicon Transistor | Sanyo Semicon Device |
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2SA1700 | PNP Transistor | LGE |
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2SA1700 | PNP Epitaxial Planar Silicon Transistor | GME |
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2SA1700 | PNP EPITAXIAL SILICON TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
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| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
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