2SA1700 Datasheet PDF

FEATURES

z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage -400 -400 V V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA ICP Collector Power Dissipation -400 mA PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)005 Rev.A 1 PNP Epitaxial Planar Silicon Transistor Production specification 2SA1700

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage VCEO Emitter-base breakdown voltage VEBO Collector cut-off current ICBO Emitter cut-off cur