2SA1700 Datasheet PDF

FEATURES

High breakdown voltage Adoption of MBIT process Excellent hFE linearity

MAXIMUM RATINGS

(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS

(Tamb=25℃ unless TO-252-2L Dimensions in inches and (millimeters) otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-10µA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA,IB=0 -400 V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO IE=-10µA,IC=0 VCB=-300V,IE=0 VEB=-4V,IC=0 -5 V -0.1 µA -0.1 µ