Datasheet Summary
1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
VCEO
Collector-Emitter Voltage
-400
VEBO
Emitter-Base Voltage
-5 V
Collector Current
- Continuous
-0.2
PC Collector Power Dissipation
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃...
