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1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-0.
2SA1700 Datasheet
