Unisonic Technologies 2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SA1700 |
|---|---|
| Datasheet | 2SA1700 Download |
| Manufacturer |  Unisonic Technologies |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* High breakdown voltage. * Excellent hFE linearity.● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-252 Pin Assignment 123 BCE BCE Packing Tube Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R213-011.C 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -400 -400 V V Emitter-Base Voltage Collector Current VEBO IC -5 -200 V mA Collector Current (PULSE) Power Dissipation Junction Temperature ICP -400 mA PD 1 10 (TC=25°C) W W TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C N
